电子科学与技术专业英语资料
-
电子科学与技术专业英语复习资料
一，单词翻译（
20
分）
晶体生长
crystal-
growth
异质结
heterojunction
发射结
emitter
junction
肖特基接触
schottky contact
固相扩散
Solid phase
diffusion
微波器件
microwave devices
漏电流
leakage
current
少数载流子
minority
-
carrier
电阻
resistance
电流密度
current density
输入端
input port
近红外
near-infrared
传输模式
transport
form
光学吸收
optical
absorption
自发辐射
spontaneous emission
混合电路
hybrid
circuit
集电结
collector
junction
基区
base
region
复合
recombination
多晶硅
polycrystalline
损耗
depletion
多数载流子
majority -
carrier
封装
package
电流
current
电压
voltage
输出端
output port
紫外
ultraviolet
饱和电流
saturation currents
受激辐射
stimulated
emission
二、阅读理解（
20
分）
三、段落翻译（
40
分）
1
、
The unfolding
story of solid-state electronics can be told
rather completely in
terms of evolving
fabrication technology, constantly expanding the
number of options
available to the
device and integrated-circuit designer. It was for
technological reasons
that an early and
important kind of BJT was a germanium PNP device.
The term PNP
labels the conductivity
types of the three regions within a BJT, regions
separated by
two
PN
junctions.
In
later
years,
and
again
partly
for
technological
reasons,
the
dominant BJT was a
silicon NPN device. In integrated circuits today,
the combination
of
silicon
NPN
and
PNP
devices
is
a
growing
practice
because
the
resulting
complementary
circuits
have
important
power-dissipation
and
performance
advantages. For convenience and
consistency, however, and because of its
continuing
importance, the silicon NPN
BJT will be the vehicle for this chapter.
< br>根据制备技术的进化，给器件和集成电路设计者的可用选择数不断扩展，使得固态电子学
< br>的演变故事可以描述得更为完整。由于技术原因，早期重要的晶体管是锗
PNP
器件，
PNP
型晶
体管的导电区有三个区，这些区被两个
PN
结分开。在随后的几年，又由于部分技术的原因，
占优势的晶体管是硅
NPN
器件。在集成电路的今天，硅
NPN
和
PNP
器件的组合成
为常用
的形式，因为有效互补电路具有重要的功耗
和性能优势。然而，为了方便和一致性，
以及因
为连续性的重要性，
NPN
型硅晶体管将是在这章的主要讨论内容。
2
、
The essential structure of a BJT is
represented in Figure 2-1 (a). The very
earliest such devices had structures
literally of this kind. Two closely spaced
junctions
were
created
by
crystal-growth
methods,
and
a
“
bar
”
or
parallelepiped
was
then
cut out
of the germanium crystal. Electrical leads were
attached to it (an
enormous
challenge!) and the result was a BJT.
For reasons that will be explained shortly ,The
electrical terminals are given the
names, respectively from left to right, emitter,
base,
and collector. These names were
chosen with an eye to distinctive initial letters,
which
are
displayed
in
Figure2-1(a)
in
association
with
the
three
terminals.
The
shaded
regions in Figure
2-1(a) represent the space-charge regions (or
depletion regions) of a
pair
of
NP
junctions.
The
boundaries
of
the
these
regions
are
emphasized
because
conditions
at
there
assume
far
greater
importance
than
conditions
at
the
metallurgical
junction
(which
are
not
even
represented
in
the
drawing.)
The
term
“
base
”
may well be a puzzling choice in the
context of Figure 2-1(a). Actually, the
term
is
a
vestigial
remnant
(and
practically
the
only
remnant)
of
the
point-
contact
transistor. In that device a
small germanium crystal was mounted on a pedestal,
and
two point-contact wires (designated
as emitter and collector) were positioned on top
of the crystal, so that the crystal was
literally the
“
base
”
of the structure. The central
region in Figure 2-1(a) plays an
electrical role analogous to that of the base
region in a
point-contact device.
图
2-1
（
a
）给出了晶体管的基本结构。非常早期的器件就是这种结构，
两个相近空间结
是用晶体生长的方法制得的，条棒或平行管是通过锯切锗晶体而得。电接
头和晶体棒紧密接
触（大挑
战！）制成晶体管。由于即将介绍的
原因，给这些电极命名，从左到右分别为：发
射极、基
极和集电
极，这些名称通过目测区分原始标记来进行选择，而这些标志显示在与三个电极相联
系的
图
2-1
（
a
）中。图
2-1
< br>（
a
）中阴影区域代表一对
PN
结的空间电荷区（耗尽
层）
，这些
区域的边缘得以强调是因为在那种假定状态下远比合金结（未
在图中画出）状态
下重要。基
极在图
2-1
（
a
）
背景下比较难确定。实际上，电极是点接触晶体管的残留阳极（仅是阳极）
。在
器件上一块小的锗晶体沉积在衬底上，两个点接触线（特指发射极和集电极）
制备在晶体
表面，所以实际上晶体成为了器件的基区。图
2-1
（
a
）的中心区域与点接触器件的基区在电
处理上有类似之处。
3
、
An
input
port
or
an
output
port
in
the
circuit
sense
consists
of
a
pair
of
terminals.
Since
the
BJT
is
a
three-terminal
device,
one
of
the
three
terminals
is
permitted to be common to the input and
output ports, and the other two terminals are
each uniquely associated with each
port. For reasons that we shall examine ,when the
base and emitter terminals are chosen
for the input port with the collector and emitter
terminals taken for the output port,
the BJT can exhibit both current gain and voltage
gain.
This
useful
combination
of
properties
has
made
the
common-
emitter
configuration the most widely
used of the several possibilities, a term
acknowledging
that
the
emitter
terminal
is
common
to
the
input
and
output
ports.
The
adjective
“
grounded-
emitter
”
is also
sometimes applied to this connection.
在
电路方向中的输入端和输出端组成一对终端。由于晶体管是一个三接线端的器件，其
中
一端作为输入端和输出端的公共端，其他两端独立并与对应端
相联系。由于这个原因，我
们将检
测，当基极和发射极端用作输入以及集电极和发射极端用作输出端时，晶体管能呈现
的电流和电压
增益。这种特性的有效组合使得共发射极构造广泛
用于一些可能的地方，也就
是发射极端是输入输
出的公共端。“辅助共发射极”有时也用于这种连接。
4
、
Operation of the BJT can be approached
by examining the properties of its
two
junctions
individually
，
considering
them to be isolated
．
As we
saw in Chapter 1
，
this
is
term
that
describes
a
junction
whose
end
regions
are
extensive
in
the
x
direction (since we
continue to consider one-dimensional structures
only). As a result,
the carrier-density
disturbances that accompany junction biasing have
space enough to
“
fade
away
．
Thus the inherent
properties
of the junction under study
will be seen
．
And since we are going to
assume step
junctions
only
，
these
inherent
junction
properties
subsume
those
of
both
of
its
uniformly doped regions-properties such
as absolute doping and carrier
lifetime
．
Then
we
shall combine the junctions in order to examine
their interaction
．
In a
BJT
，
this
interaction
is
crucial;
there
is
no
way
to
simulate
BJT
behavior
using
isolated
junctions.
< br>晶体管的工作原理在考虑其是独立器件的前提下，可以通过分别测量它两个结的特性而近
< br>似得到。正如我们在第一章所看到，这种情况描述结电极的边缘区域在
X
方向的延伸（因为我们
一直认为只
是一维结构而已）
。因此，伴随结偏的载流子浓度变化，在它们到达接触之前有
足够的空间逐渐消失。我们也就得到了研究的
PN
结的固有特性。由于我们只是假定为突变结，
这些
PN
结的固有特
性是由平均掺杂区域特性，如绝对掺杂和载流子寿命，所决
定。为了检测
它们的相互影响，我们将组合这些结。在一个晶体管中，这种影响具有决定性，
没有办法用独立的
PN
结来模拟晶体管的特性。
5
、
The most important of the secondary
currents is the one labeled IB, the
base-
terminal current
．
It differs in
numerous and major ways from the primary electron
current that has occupied us up to this
point
：
First
．
it is a majority-carrier
current
，
or
a hole
current in
the NPN device.
Second
，
it flows laterally
from the base
contact into the active
region of the BJT
．
Refer back
to Figure 2
－
2, which shows
the
commonplace (diffused) BJT in a
relatively realistic cross section. The portion of
the
base region contiguous with (or
“
under
sometimes
also termed the intrinsic base
region
．
（
This use
of the term does not have
doping
connotations
．
）
The outer portions of the base
region
，
in analogous
fashion
，
are
sometimes designated by the adjective extrinsic
．
It is there that the base
contact is
made in this kind of
BJT
．
（
Base
contacts
，
by the
way
，
can be and often are
made on
both sides of the
emitter
）
The third major
distinction of the base current from the
primary electron current thus becomes
evident
．
The
current of holes traverses a
relatively
long path within the base
region
．
In the example we are
considering it could
be several tens of
micrometers
，
as
compared to the less-than-one-micrometer base
thickness traversed by the electrons.
最重要的二级电流是基极端电流
<
/p>
I
B
.
它在数量
上和主要方式上不同于主要电流，原因在
下述几点：首先，它是
NPN
器件的多数载流子电流或空穴电流。第二，它横向地从
晶体管
的基区向活动区域流动。回到图
2-2
，图中给出了在实际中交叉区域的常见（扩散）
晶体管
。
接触发射区基区是活动的基极区域，有时也认为是本征基极区域（在实际能级应用中不
具有
掺杂的特点）
。在类似结构中，基区的外接端有时特制为非
本征情况，这种晶体管的基极接
触如是制备（顺便说，基极接触能够并通常制备在发射极
的两侧）
。第三是来自主要电流的
基极电流的差别变得很明显。
空穴电流在基区传输了一段相对较长的距离，在所给例子中与电
子移动的少于一微米的基
区厚度相比，我们认为空穴移动了几十微米。
6
、
Once
in the intrinsic base region
，
most of the
holes undergo a change